Qorvo's New Plastic GaN Transistors Provide Cost Effective Radar and Communications System Solutions

GREENSBORO, N.C. and HILLSBORO, Ore., May 20, 2015 (GLOBE NEWSWIRE) -- Qorvo™ (Nasdaq:QRVO), a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, today announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.

"Qorvo's input-matched GaN transistors have become very popular because they can be optimized for power and efficiency within the band, enabling RF systems to have greater flexibility and simplified board design," said James Klein, Qorvo's president of Infrastructure and Defense Products. "By expanding the portfolio of GaN transistors to include low-cost plastic packaging, Qorvo is providing customers with cost-effective, scalable GaN solutions that are also very power efficient."

The 5W TGF2965-SM, 5W TGF3020-SM and 10W TGF3015-SM input-matched transistors enable high linear gain and power efficiency in a low-cost, space-saving surface-mount plastic QFN package. The integrated input matching network enables wideband gain and power performance. The output can be matched on the board to optimize power and efficiency for any region within the band. The 30W TGF2031-SM also has the features of low-cost, space saving plastic packaging as well as providing continuous-wave capabilities for military communications applications. Qorvo's plastic packaged GaN HEMTs are sampling today.

Part Number Frequency
Range (GHz)
Output Power
(P3dB)
PAE % Linear Gain
(dB)
Packaging
(mm)
TGF2965-SM 0.03-3.0 6.0W at 2 GHz 63% 18 at 2 GHz 3x3 plastic QFN
TGF3020-SM 4.0-6.0 6.8W at 5 GHz 59% 12.7 at 5 GHz 3x3 plastic QFN
TGF3015-SM 0.03-3.0 11.0W at 2.4 GHz 62% 17.1 at 2.4 GHz 3x3 plastic QFN
TGF3021-SM 0.03 -4.0 36.0W at 2 GHz 72% 19.3 at 2 GHz 3x4 plastic QFN

Qorvo is showcasing its portfolio of plastic-packaged GaN HEMTs and the recently announced GaN MMICs at booth 331 at the IEEE International Microwave Symposium (IMS), May 18-21 in Phoenix, Arizona. Discuss with us at the show or online using #IMS2015 and #QorvoIMS.

About Qorvo

Qorvo (Nasdaq:QRVO) is a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications. Qorvo was formed following the merger of RFMD and TriQuint, and has more than 6,000 global employees dedicated to delivering solutions for everything that connects the world. Qorvo has the industry's broadest portfolio of products and core technologies; world-class ISO9001-, ISO 14001- and ISO/TS 16949-certified manufacturing facilities; and is a DoD-accredited 'Trusted Source' (Category 1A) for GaAs, GaN and BAW products and services. For the industry's leading core RF solutions, visit www.qorvo.com.

This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. Qorvo's business is subject to numerous risks and uncertainties, including variability in operating results, the inability of certain of our customers or suppliers to access their traditional sources of credit, our industry's rapidly changing technology, our dependence on a few large customers for a substantial portion of our revenue, our ability to implement innovative technologies, our ability to bring new products to market and achieve design wins, the efficient and successful operation of our wafer fabrication facilities, assembly facilities and test and tape and reel facilities, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, variability in manufacturing yields, industry overcapacity and current macroeconomic conditions, inaccurate product forecasts and corresponding inventory and manufacturing costs, dependence on third parties and our ability to manage channel partners and customer relationships, our dependence on international sales and operations, our ability to attract and retain skilled personnel and develop leaders, the possibility that future acquisitions may dilute our shareholders' ownership and cause us to incur debt and assume contingent liabilities, fluctuations in the price of our common stock, additional claims of infringement on our intellectual property portfolio, lawsuits and claims relating to our products, security breaches and other similar disruptions compromising our information and exposing us to liability, the impact of stringent environmental regulations, and the impact of the integration of Qorvo. These and other risks and uncertainties, which are described in more detail in Qorvo's 8K and other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.

CONTACT: Media Contact: Katie Caballero, Marketing Communications Manager, Communications, Qorvo Infrastructure and Defense Products E Katie.caballero@qorvo.com W +1 972-994-8546

Source:Qorvo