Qorvo's New Plastic GaN Transistors Provide Cost Effective Radar and Communications System Solutions

GREENSBORO, N.C. and HILLSBORO, Ore., May 20, 2015 (GLOBE NEWSWIRE) -- Qorvo™ (Nasdaq:QRVO), a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, today announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.

"Qorvo's input-matched GaN transistors have become very popular because they can be optimized for power and efficiency within the band, enabling RF systems to have greater flexibility and simplified board design," said James Klein, Qorvo's president of Infrastructure and Defense Products. "By expanding the portfolio of GaN transistors to include low-cost plastic packaging, Qorvo is providing customers with cost-effective, scalable GaN solutions that are also very power efficient."

The 5W TGF2965-SM, 5W TGF3020-SM and 10W TGF3015-SM input-matched transistors enable high linear gain and power efficiency in a low-cost, space-saving surface-mount plastic QFN package. The integrated input matching network enables wideband gain and power performance. The output can be matched on the board to optimize power and efficiency for any region within the band. The 30W TGF2031-SM also has the features of low-cost, space saving plastic packaging as well as providing continuous-wave capabilities for military communications applications. Qorvo's plastic packaged GaN HEMTs are sampling today.

Part Number Frequency
Range (GHz)
Output Power
PAE % Linear Gain
TGF2965-SM 0.03-3.0 6.0W at 2 GHz 63% 18 at 2 GHz 3x3 plastic QFN
TGF3020-SM 4.0-6.0 6.8W at 5 GHz 59% 12.7 at 5 GHz 3x3 plastic QFN
TGF3015-SM 0.03-3.0 11.0W at 2.4 GHz 62% 17.1 at 2.4 GHz 3x3 plastic QFN
TGF3021-SM 0.03 -4.0 36.0W at 2 GHz 72% 19.3 at 2 GHz 3x4 plastic QFN

Qorvo is showcasing its portfolio of plastic-packaged GaN HEMTs and the recently announced GaN MMICs at booth 331 at the IEEE International Microwave Symposium (IMS), May 18-21 in Phoenix, Arizona. Discuss with us at the show or online using #IMS2015 and #QorvoIMS.

About Qorvo

Qorvo (Nasdaq:QRVO) is a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications. Qorvo was formed following the merger of RFMD and TriQuint, and has more than 6,000 global employees dedicated to delivering solutions for everything that connects the world. Qorvo has the industry's broadest portfolio of products and core technologies; world-class ISO9001-, ISO 14001- and ISO/TS 16949-certified manufacturing facilities; and is a DoD-accredited 'Trusted Source' (Category 1A) for GaAs, GaN and BAW products and services. For the industry's leading core RF solutions, visit www.qorvo.com.

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CONTACT: Media Contact: Katie Caballero, Marketing Communications Manager, Communications, Qorvo Infrastructure and Defense Products E Katie.caballero@qorvo.com W +1 972-994-8546