ISSI Announces Sampling of 1Gb and 2Gb DDR3 SDRAM

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SAN JOSE, Calif., Oct. 3, 2012 (GLOBE NEWSWIRE) -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today announced it has begun sampling production units of its new 1Gigabit (1Gbit) and 2 Gigabit (2Gbit) DDR3 devices, the first of ISSI's family of DDR3 SDRAMs. The 1Gbit DDR3 device is the IS43TR16640A, which operates at 1.5V, is organized as 64Mx16 and packaged in a 96-ball BGA. The 2Gbit DDR3 device is the IS43TR16128A, which operates at 1.5V, is organized as 128Mx16 and packaged in a 96-ball BGA. This initial offering of the DDR3 SDRAM product family adds to ISSI's extensive selection of DRAMs. By using advanced technology, ISSI is able to provide the long lifecycle product support as required by applications in automotive, communications, industrial, medical and mil-aerospace.

The new devices are available with clock speeds up to 933MHz (DDR3-1866). In addition to these x16 devices, ISSI also plans to offer devices with x8 data-width organization in a 1Gbit (IS43TR81280A) and 2Gbit (IS43TR82560A) configuration. A low voltage option of 1.35V (DDR3L) will follow, where the IS43TR16640AL or IS43TR81280AL will be the 1Gbit device and the IS43TR16128AL or IS43TR82560AL the 2Gbit. The DDR3 and DDR3L products will be available in commercial, industrial, and automotive temperature grades.

"Our automotive customers are excited about our newest family of DDR3 products, the latest generation of DRAMs which further exemplify our long-term commitment to their product roadmaps. Customers have begun to qualify the DDR3 devices in multimedia, navigation and clusters, where new features and high-speed processors in these systems are driving adoption of this memory technology," said Lyn Zastrow, vice president of the Automotive Business Unit.

"The expansion of broadband infrastructure in data centers and customer-premise equipment are driving system designers to incorporate DDR3 DRAMs into their products. These applications also have long-life requirements, so ISSI's commitment to long-term support of the 1Gbit and 2Gbit DDR3 products will be important for our customers in the communications and networking markets," said Ron Kalakuntla, vice president of marketing. Key applications in the communications market segment include access and aggregation nodes, routers and switches, network storage, optical transport and base stations.

In addition to its new DDR3 SDRAMs, ISSI also offers a broad line of SDR, mobile SDR/DDR, DDR, and DDR2 products, as well as a comprehensive line of asynchronous and synchronous SRAMs with densities from 64Kb to 72Mb, flash memory products, and analog & mixed signal products. ISSI supports a range of Known Good Die (KGD) devices in its portfolio.


Samples of the x16, 1.5V DDR3 products, the IS43TR16128A and IS43TR16640A, are available in commercial and industrial temperature ranges, and the IS46TR16128A and IS46TR16640A are available in automotive temperature ranges with volume production shipments beginning in the first quarter of 2013. Samples of the x8, 1.5V options, and x8/x16, 1.35V options will be available near the end of the year with volume production shipments beginning in the first quarter of 2013.

About ISSI

ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) industrial, medical, and military, and (iv) digital consumer. The Company's primary products are high speed and low power SRAM and low and medium density DRAM. With its acquisition of Chingis, ISSI designs and markets a variety of NOR flash memory technologies used in standalone and embedded applications. ISSI also designs and markets high performance analog and mixed signal integrated circuits. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, Japan, Singapore, China, Europe, Hong Kong, India, and Korea. Visit our web site at

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Forward Looking Statements

This news release contains forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995. Statements concerning providing long lifecycle support, plans to offer devices, long-term commitment to product roadmap, driving adoption of memory technology and driving system designers to incorporate DDR3 DRAMs into their products are forward-looking statements that involve risks and uncertainties that could cause actual results to differ materially from those anticipated. Such risks and uncertainties include our ability to release new products on a timely basis and with the specifications and performance desired by our current and potential customers, our actual ability to support products on a long-term basis, industry and market developments, the actual adoption rates for memory technology, the actual demand for our products and the products of our current and potential customers which use our products and other risks listed from time to time in the Company's filings with the Securities and Exchange Commission, including the Company's Form 10-K for the year ended September 30, 2011 and its Form 10-Q for the quarter ended June 30, 2012.

CONTACT: Integrated Silicon Solution, Inc. Ron Kalakuntla 408.969.4675 Tom Doczy 408.969.4620 Shelton Group Leanne K. Sievers 949.224.3874

Source:Integrated Silicon Solution, Inc.